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savantic semiconductor product specification silicon pnp power transistors 2SB1149 d escription with to-126 package darlington high dc current gain low collector saturation voltage applications for use in operating from ic without predriver ,such as hammer driver pinning(see fig.2) pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -8 v i c collector current (dc) -3.0 a i cm collector current-peak -5.0 a t a =25 1.3 p d total power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1149 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-1.5a ;i b =-1.5ma -0.9 -1.2 v v besat base-emitter saturation voltage i c =-1.5a ;i b =-1.5ma -1.5 -2.0 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-1.5a ; v ce =-2v 2000 15000 h fe-2 dc current gain i c =-3a ; v ce =-2v 1000 switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c =-1.5a ; i b1 =-i b2 =-1.5ma v cc ? -40v;r l =27 b 1.0 s h fe-1 classifications m l k 2000-5000 3000-7000 5000-15000
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1149 package outline fig.2 outline dimensions

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